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PDF 2N6344A Data sheet ( Hoja de datos )
| Número de pieza | 2N6344A | |
| Descripción | (2N6344A - 2N6349A) Triacs Silicon Bidirectional Thyristors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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2N6344A, 2N6348A,
2N6349A
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
• Blocking Voltage to 800 V
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• 8.0 A Devices Available as 2N6344 thru 2N6349
• Pb−Free Packages are Available*
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 4
2N634xAG
AYWW
2N634xA = Device Code
x = 4, 8, or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6344A/D
1 page  
2N6344A, 2N6348A, 2N6349A
110
30°
60°
100 90°
120°
180°
90
α
α
80
α = CONDUCTION ANGLE
dc
70
0 2.0 4.0 6.0 8.0 10 12
IT(RMS), RMS ON-STATE CURRENT, (AMP)
14
Figure 1. RMS Current Derating
20
dc
16 α
α
12
α = CONDUCTION ANGLE
8.0 TJ = 110°C
180°
120°
90°
4.0
60
α = 30° °
0
0 2.0 4.0 6.0 8.0 10 12 14
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 2. On−State Power Dissipation
1.8
VD = 12 V
1.6
1.4
QUADRANT 4
1.2
1.0
0.8 1
QUADRANTS 2
0.6 3
0.4
−60 −40 −20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C)
120 140
Figure 3. Typical Gate Trigger Voltage
50
VD = 12 V
30
20
1
10 2
QUADRANT
3
7.0 4
5.0
−60 −40 −20
0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Typical Gate Trigger Current
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N6344A.PDF ] | |
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