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Número de pieza | 2N6034 | |
Descripción | (2N6034 - 2N6039) Plastic Darlington Complementary Silicon Power Transistors | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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(PNP) 2N6034, 2N6035,
2N6036; (NPN) 2N6038,
2N6039
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Voltage
2N6034 VCEO 40 Vdc
2N6035, 2N6038
60
2N6036, 2N6039
80
Collector−Base Voltage
2N6034 VCBO 40 Vdc
2N6035, 2N6038
60
2N6036, 2N6039
80
Emitter−Base Voltage
Collector Current
VEBO 5.0 Vdc
Continuous
Peak
IC
4.0 Adc
8.0 Apk
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
IB 100 mAdc
PD 40 W
320 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to
+ 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.12 °C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
321
TO−225AA
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
2
N603xG
Y
WW
2N603x
G
= Year
= Work Week
= Device Code
x = 4, 5, 6, 8, 9
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 13
1
Publication Order Number:
2N6035/D
1 page (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
3.4
3.0
IC =
2.6 0.5 A
1.0 A
2.2
2.0 A
TJ = 25°C
4.0 A
3.4
3.0 IC =
0.5 A
2.6
2.2
1.0 A 2.0 A
4.0 A
TJ = 25°C
1.8 1.8
1.4 1.4
1.0
0.6
0.1 0.2
1.0
0.5 1.0 2.0 5.0 10 20 51000
0.6
0.1 0.2 0.5
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
100
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3.0 V
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3.0 V
0.2
0.04 0.06
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 4.0
0.2
0.04 0.06
Figure 9. “On” Voltages
0.1 0.2 0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
ORDERING INFORMATION
2N6034
2N6034G
Device
2N6035
2N6035G
2N6036
2N6036G
2N6038
2N6038G
2N6039
2N6039G
Package
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
http://onsemi.com
5
Shipping
500 Units / Box
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2N6034.PDF ] |
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