|
|
PDF 2N5190 Data sheet ( Hoja de datos )
| Número de pieza | 2N5190 | |
| Descripción | Silicon NPN Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N5190 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
2N5190, 2N5191, 2N5192
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, — excellent safe area limits. Complement to PNP
2N5194, 2N5195.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• Pb−Free Packages are Available*
http://onsemi.com
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N5190
2N5191
2N5192
VCEO
40
60
80
Vdc
Collector−Base Voltage
2N5190
2N5191
2N5192
VCBO
40
60
80
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VEBO
IC
IB
PD
5.0 Vdc
4.0 Adc
1.0 Adc
40 W
320 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case RqJC
3.12 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 12
1
321
TO−225AA
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
2
N519xG
Y=
WW =
2N519x =
G=
Year
Work Week
Device Code
x = 0, 1, or 2
Pb−Free Package
ORDERING INFORMATION
Device
2N5190
Package
TO−225AA
Shipping†
500 Units/Box
2N5190G
TO−225AA
(Pb−Free)
500 Units/Box
2N5191
TO−225AA
500 Units/Box
2N5191G
TO−225AA
(Pb−Free)
500 Units/Box
2N5192
TO−225AA
500 Units/Box
2N5192G
TO−225AA
(Pb−Free)
500 Units/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N5191/D
1 page  
2N5190, 2N5191, 2N5192
10
5.0
TJ = 150°C
2.0
5.0 ms
100 ms
1.0 ms
dc
1.0
SECONDARY BREAKDOWN LIMIT
0.5 THERMAL LIMIT AT TC = 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
0.2 2N5191
0.1
1.0
2.0
2N5192
5.0 10 20
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
100
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03 0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20
Figure 12. Thermal Response
qJC(max) = 3.12°C/W Ċ 2N5190−92
50 100 200
500 1000
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
tP
PP
PP
t1
1/f
Figure A
DUTY CYCLE, D = t1 f −
t1
tP
PEAK PULSE POWER = PP
A train of periodical power pulses can be represented by
the model shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find qJC(t), multiply the value obtained from Figure 12
by the steady state value qJC.
Example:
The 2N5190 is dissipating 50 watts under the following
conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in function temperature is therefore:
DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N5190.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N5190 | NPN SILICON POWER TRANSISTOR |  Central Semiconductor Corp |
| 2N5190 | Silicon NPN Power Transistors | ON Semiconductor |
| 2N5190 | (2N5190 - 2N5192) Silicon NPN Power Transistors |  SavantIC |
| 2N5190 | Trans GP BJT NPN 40V 4A 3-Pin TO-126 |  New Jersey Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |