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PDF FDFMA2N028Z Data sheet ( Hoja de datos )
| Número de pieza | FDFMA2N028Z | |
| Descripción | Integrated N-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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December 2006
FDFMA2N028Z
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
20V, 3.7A, 68mΩ
Features
General Description
MOSFET
Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
Schottky
VF < 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
RoHS Compliant
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low on-state resistance,
and an independently connected schottky diode with low forward
voltage.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Application
DC - DC Conversion
Pin 1
A NC D
A1
6C
NC 2
5G
D3
4S
MicroFET 2X2
CG S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
PD
TJ, TSTG
VRR
IO
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
3.7
6
1.4
0.7
-55 to +150
20
2
Units
V
V
A
W
°C
V
A
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
.N28
Device
FDFMA2N028Z
©2006 Fairchild Semiconductor Corporation
FDFMA2N028Z Rev.B
Package
MicroFET 2X2
1
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
140
°C/W
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 3.7A
8
6 VDD = 5V
VDD = 15V
4 VDD = 10V
2
0
02468
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10
1000
Ciss
Coss
100
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
20
10 rDS(on) LIMIT
100us
1 1ms
10ms
VGS=4.5V
0.1 SINGLE PULSE
RθJA=173oC/W
TA = 25oC
0.01
0.1
1
100ms
1s
10s
DC
10 60
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
50
SINGLE PULSE
40 RθJA = 173oC/W
TA=25oC
30
20
10 SINGLE PULSE
0
10-4 10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)
102
Figure 10. Single Pulse Maximum
Power Dissipation
103
10
TJ = 125oC
1
0.1
TJ = 85oC
0.01
TJ = 25oC
0.001
0
200 400 600
VF, FORWARD VOLTAGE(mV)
800
Figure 11. Schottky Diode Forward Current
100
TJ = 125oC
10
1
TJ = 85oC
0.1
0.01
TJ = 25oC
0.001
0
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
30
Figure 12. Schottky Diode Reverse Current
FDFMA2N028Z Rev.B
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDFMA2N028Z.PDF ] | |
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