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PDF L6388 Data sheet ( Hoja de datos )
| Número de pieza | L6388 | |
| Descripción | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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L6388
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
1 FEATURES
■ HIGH VOLTAGE RAIL UP TO 600 V
■ dV/dt IMMUNITY ± 50 V/nsec IN FULL
TEMPERATURE RANGE
■ DRIVER CURRENT CAPABILITY:400 mA
SOURCE,650 mA SINK
■ SWITCHING TIMES 70/40 nsec RISE/FALL
WITH 1nF LOAD
■ 3.3V, 5V, 15V CMOS/TTL INPUTS
COMPARATORS WITH HYSTERESYS AND
PULL DOWN
■ INTERNAL BOOTSTRAP DIODE
■ OUTPUTS IN PHASE WITH INPUTS
■ DEAD TIME AND INTERLOCKING FUNCTION
2 DESCRIPTION
The L6388 is an high-voltage device, manufac-
tured with the BCD"OFF-LINE" technology.
Figure 2. Block Diagram
Figure 1. Package
SO8
Table 1. Order Codes
Part Number
L6388
L6388D
L6388D013TR
DIP8
Package
DIP8
SO8
SO8 in Tape & Reel
It has a Driver structure that enables to drive inde-
pendent referenced N Channel Power MOS or IG-
BT. The Upper (Floating) Section is enabled to
work with voltage Rail up to 600V.
The Logic Inputs are CMOS/TTL compatible for
ease of interfacing with controlling devices.
VCC 3
2
HIN
1
LIN
BOOTSTRAP DRIVER
UV
DETECTION
LOGIC
UV
DETECTION
SHOOT
THROUGH
PREVENTION
LEVEL
SHIFTER
8 Vboot
Cboot
H.V.
HVG
R DRIVER HVG
R
7
S
OUT
6
VCC
TO LOAD
5 LVG
LVG
DRIVER
4 GND
May 2005
Rev. 2
1/11
1 page  
L6388
3 INPUT LOGIC
Input logic is provided with an interlocking circuitry which avoids the two outputs (LVG, HVG) to be active at the
same time when both the logic input pins (LIN, HIN) are at a high logic level. In addition, to prevent cross con-
duction of the external MOSFETs, after each output is turned-off the other output cannot be turned-on before a
certain amount of time (DT) (see Figure 4).
Figure 6. Typical Rise and Fall Times vs. Load
Capacitance
time
(nsec)
D99IN1054
250
Figure 7. Quiescent Current vs. Supply
Voltage
Iq
(µA)
104
D99IN1055
200
Tr 103
150
Tf
100
102
50
0
0 1 2 3 4 5 C (nF)
For both high and low side buffers @25˚C Tamb
10
0 2 4 6 8 10 12 14 16 VS(V)
3.1 BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a
high voltage fast recovery diode (fig. 8a). In the L6388 a patented integrated structure replaces the external di-
ode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series
a diode, as shown in fig. 8b
An internal charge pump (fig. 8b) provides the DMOS driving voltage .
The diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
3.2 CBOOT selection and charging
To choose the proper CBOOT value the external MOS can be seen as an equivalent capacitor. This capacitor
CEXT is related to the MOS total gate charge :
CEXT
=
Q-----g---a----t-e-
Vgate
The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss .
It has to be:
CBOOT>>>CEXT
e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be 300mV.
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also the leakage losses.
e.g.: HVG steady state consumption is lower than 200µA, so if HVG TON is 5ms, CBOOT has to supply 1µC to
CEXT. This charge on a 1µF capacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually
has great leakage current). This structure can work only if VOUT is close to GND (or lower) and in the meanwhile
the LVG is on. The charging time (Tcharge) of the CBOOT is the time in which both conditions are fulfilled and it
5/11
5 Page 
L6388
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
11/11
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| PDF Descargar | [ Datasheet L6388.PDF ] | |
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