DataSheet.es    


PDF K8D1716UBC Data sheet ( Hoja de datos )

Número de pieza K8D1716UBC
Descripción 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



Hay una vista previa y un enlace de descarga de K8D1716UBC (archivo pdf) en la parte inferior de esta página.


Total 30 Páginas

No Preview Available ! K8D1716UBC Hoja de datos, Descripción, Manual

www.DataSheet4U.com
K8D1716UTC / K8D1716UBC
FLASH MEMORY
Document Title
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
Revision History
Revision No. History
0.0 Initial Draft
0.1 Support 48TSOP1 Lead Free Package
0.2 Support 48FBGA Leaded/Lead Free Package
1.0 Specification finalized
Draft Date
July 25, 2004
Sep 16, 2004
Nov 29, 2004
Dec 16, 2004
Remark
Advance
Preliminary
Preliminary
1 Revision 1.0
December 2004

1 page




K8D1716UBC pdf
K8D1716UTC / K8D1716UBC
FLASH MEMORY
Table 3. Top Boot Block Address (K8D1716UT)
K8D1716UT
Block
A19
A18
A17
A16
A15
A14
A13
A12
Block Size
(KW/KB)
Address Range
Word Mode
Byte Mode
BA38
1
1
1
1
1
1
1
1
BA37
1
1
1
1
1
1
1
0
4/8
4/8
FF000H-FFFFFH
FE000H-FEFFFH
1FE000H-1FFFFFH
1FC000H-1FDFFFH
BA36
1
1
1
1
1
1
0
1
BA35
1
1
1
1
1
1
0
0
BA34
1
1
1
1
1
0
1
1
4 / 8 FD000H-FDFFFH 1FA000H-1FBFFFH
4 / 8 FC000H-FCFFFH 1F8000H-1F9FFFH
4 / 8 FB000H-FBFFFH 1F6000H-1F7FFFH
BA33
1
1
1
1
1
0
1
0
BA32
1
1
1
1
1
0
0
1
BA31
1
1
1
1
1
0
0
0
4 / 8 FA000H-FAFFFH 1F4000H-1F5FFFH
4 / 8 F9000H-F9FFFH 1F2000H-1F3FFFH
4 / 8 F8000H-F8FFFH 1F0000H-1F1FFFH
Bank1
BA30
1
1 1 1 0XXX
32 / 64
F0000H-F7FFFH 1E0000H-1EFFFFH
BA29
1
1 1 0 1XXX
32 / 64
E8000H-EFFFFH 1D0000H-1DFFFFH
BA28
1
1 1 0 0XXX
32 / 64
E0000H-E7FFFH 1C0000H-1CFFFFH
BA27
1
1 0 1 1XXX
32 / 64
D8000H-DFFFFH 1B0000H-1BFFFFH
BA26
1
1 0 1 0XXX
32 / 64
D0000H-D7FFFH 1A0000H-1AFFFFH
BA25
1
1 0 0 1XXX
32 / 64
C8000H-CFFFFH 190000H-19FFFFH
BA24
1
1 0 0 0XXX
32 / 64
C0000H-C7FFFH 180000H-18FFFFH
BA23
1
0 1 1 1XXX
32 / 64
B8000H-BFFFFH 170000H-17FFFFH
BA22
1
0 1 1 0XXX
32 / 64
B0000H-B7FFFH 160000H-16FFFFH
BA21
1
0 1 0 1XXX
32 / 64
A8000H-AFFFFH 150000H-15FFFFH
BA20
1
0 1 0 0XXX
32 / 64
A0000H-A7FFFH 140000H-14FFFFH
BA19
1
0 0 1 1XXX
32 / 64
98000H-9FFFFH 130000H-13FFFFH
BA18
1
0 0 1 0XXX
32 / 64
90000H-97FFFH 120000H-12FFFFH
BA17
1
0 0 0 1XXX
32 / 64
88000H-8FFFFH 110000H-11FFFFH
BA16
1
0 0 0 0XXX
32 / 64
80000H-87FFFH 100000H-10FFFFH
BA15
0
1 1 1 1XXX
32 / 64
78000H-7FFFFH 0F0000H-0FFFFFH
BA14
0
1 1 1 0XXX
32 / 64
70000H-77FFFH 0E0000H-0EFFFFH
BA13
0
1 1 0 1XXX
32 / 64
68000H-6FFFFH 0D0000H-0DFFFFH
BA12
0
1 1 0 0XXX
32 / 64
60000H-67FFFH 0C0000H-0CFFFFH
BA11
0
1 0 1 1XXX
32 / 64
58000H-5FFFFH 0B0000H-0BFFFFH
Bank2
BA10
0
1 0 1 0XXX
32 / 64
50000H-57FFFH 0A0000H-0AFFFFH
BA9
0
1 0 0 1XXX
32 / 64
48000H-4FFFFH 090000H-09FFFFH
BA8
0
1 0 0 0XXX
32 / 64
40000H-47FFFH 080000H-08FFFFH
BA7
0
0 1 1 1XXX
32 / 64
38000H-3FFFFH 070000H-07FFFFH
BA6
0
0 1 1 0XXX
32 / 64
30000H-37FFFH 060000H-06FFFFH
BA5
0
0 1 0 1XXX
32 / 64
28000H-2FFFFH 050000H-05FFFFH
BA4
0
0 1 0 0XXX
32 / 64
20000H-27FFFH 040000H-04FFFFH
BA3
0
0 0 1 1XXX
32 / 64
18000H-1FFFFH 030000H-03FFFFH
BA2
0
0 0 1 0XXX
32 / 64
10000H-17FFFH 020000H-02FFFFH
BA1
0
0 0 0 1XXX
32 / 64
08000H-0FFFFH 010000H-01FFFFH
BA0
0
0 0 0 0XXX
32 / 64
00000H-07FFFH 000000H-00FFFFH
Table 4. Secode Block Addresses for Top Boot Devices
Device
Block Address
A19-A12
K8D1716UT
11111xxx
Block
Size
64/32
(X8)
Address Range
1F0000H-1FFFFFH
(X16)
Address Range
F8000H-FFFFFH
5 Revision 1.0
December 2004

5 Page





K8D1716UBC arduino
K8D1716UTC / K8D1716UBC
FLASH MEMORY
VID
A9
A6,A1,A0*
DQ15-DQ0
00H
ECH
01H
2222o77r75HH
V = VIH or VIL
Manufacturer
Code
Device Code
(K8D1716U)
Return to
Read Mode
Note : The addresses other than A0 , A1 and A6 are Dont care. Please refer to Table 9 for device code.
Figure 2. Autoselect Operation ( by high voltage method )
WE
A19A0(x16)/*
A19A-1(x8)
DQ15DQ0
555H/
AAAH
2AAH/
555H
555H/
AAAH
00H/
00H
01H/
02H
AAH
55H
90H
ECH
2222o77r57HH
F0H
Manufacturer
Code
Device Code
(K8D1716U)
Return to
Read Mode
Note : The 3rd Cycle and 4th Cycle address must include the same bank address. Please refer to Table 9 for device code.
Figure 3. Autoselect Operation ( by command sequence method )
Write (Program/Erase) Mode
The K8D1716U executes its program/erase operations by writing commands into the command register. In order to write the com-
mands to the register, CE and WE must be low and OE must be high. Addresses are latched on the falling edge of CE or WE (which-
ever occurs last) and the data are latched on the rising edge of CE or WE (whichever occurs first). The device uses standard
microprocessor write timing.
Program
The K8D1716U can be programmed in units of a word or a byte. Programming is writing 0's into the memory array by executing the
Internal Program Routine. In order to perform the Internal Program Routine, a four-cycle command sequence is necessary. The first
two cycles are unlock cycles. The third cycle is assigned for the program setup command. In the last cycle, the address of the mem-
ory location and the data to be programmed at that location are written. The device automatically generates adequate program
pulses and verifies the programmed cell margin by the Internal Program Routine. During the execution of the Routine, the system is
not required to provide further controls or timings.
During the Internal Program Routine, commands written to the device will be ignored. Note that a hardware reset during a program
operation will cause data corruption at the corresponding location.
WE
A19A0(x16)/
A19A-1(x8)
DQ15-DQ0
RY/BY
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
Program
Address
A0H
Program
Data
Program
Start
Figure 4. Program Command Sequence
11 Revision 1.0
December 2004

11 Page







PáginasTotal 30 Páginas
PDF Descargar[ Datasheet K8D1716UBC.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
K8D1716UBB16M Dual Bank NOR Flash MemorySamsung
Samsung
K8D1716UBC16M Bit (2M x8/1M x16) Dual Bank NOR Flash MemorySamsung semiconductor
Samsung semiconductor
K8D1716UBC16M-Bit Dual Bank NOR Flash MemorySamsung Electronics
Samsung Electronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar