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PDF IRHNA67260 Data sheet ( Hoja de datos )

Número de pieza IRHNA67260
Descripción (IRHNA67260 / IRHNA63260) RADIATION HARDENED POWER MOSFET SURFACE-MOUNT
Fabricantes International Rectifier 
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PD-94342D
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA67260 100K Rads (Si)
IRHNA63260 300K Rads (Si)
RDS(on)
0.028
0.028
ID
56A
56A
IRHNA67260
200V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
SMD-2
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Current is limited by Package
For footnotes refer to the last page
www.irf.com
56
40
224
250
2.0
±20
268
56
25
5.0
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
02/16/06

1 page




IRHNA67260 pdf
Pre-Irradiation
IRHNA67260
14000
12000
10000
8000
6000
VGS = 0V, f = 10M0HKHzz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
4000
2000
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 5663A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200 250
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0 10
10ms
100 1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5

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