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PDF RD30HVF1 Data sheet ( Hoja de datos )
| Número de pieza | RD30HVF1 | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric | |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
OUTLINE DRAWING
22.0+/-0.3
18.0+/-0.3
7.2+/-0.5 7.6+/-0.3
1
3
2.8+/-0.3
2
RoHS COMPLIANT
RD30HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
4-C1
R1.6
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50Ω
ID Drain current
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
75
2.5
7
175
-40 to +175
2.0
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 130
IGSS Gate to source leak current
VGS=10V, VDS=0V
--
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.3 1.8 2.3
Pout Output power
f=175MHz ,VDD=12.5V
30 35
-
ηD Drain efficiency
Pin=1.0W, Idq=0.5A
55 60
-
Load VSWR tolerance
VDD=15.2V,Po=30W(PinControl)
No destroy
f=175MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD30HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RF-in
Vgg Vdd
C1
8.2kOHM
9.1kOHM
100OHM
L1
10pF L2
L1 175MHz
RD30HVF1
C2
56pF
100pF
100pF
8pF
C3
56pF
RF-OUT
33pF100pF
12
27
32
34
51
90
100
43pF 5pF 50pF
10
32
44
54
90
100
8
4.8
10.8
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
RD30HVF1
MITSUBISHI ELECTRIC
5/8
10 Jan 2006
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RD30HVF1.PDF ] | |
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