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PDF IRF3007SPBF Data sheet ( Hoja de datos )

Número de pieza IRF3007SPBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF3007SPBF Hoja de datos, Descripción, Manual

Typical Applications
l Industrial Motor Drive
Features
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
This design of HEXFET® Power MOSFETs utilizes
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
PD - 95494A
IRF3007SPbF
IRF3007LPbF
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0126
S ID = 62A
D2Pak
TO-262
IRF3007SPbF IRF3007LPbF
Max.
62
44
320
120
0.8
± 20
290
946
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady state)**
Typ.
–––
–––
** This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
Max.
1.25
62
Units
°C/W
1
07/23/10

1 page




IRF3007SPBF pdf
IRF3007S/LPbF
70
60
50
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
3.0
ID = 80A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( °C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01 SINGLE PULSE
( THERMAL RESPONSE )
P DM
t1
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+T C
t2
0.001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5

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IRF3007SPBF arduino
IRF3007S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
www.irf.com
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