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PDF IRGP4068DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4068DPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 97250
IRGP4068DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
IRGP4068D-EPbFFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
CC
GC E
TO-247AC
IRGP4068DPbF
GC E
TO-247AD
IRGP4068D-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 160°C
IFSM
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
cClamped Inductive Load Current
Diode Continous Forward Current
dDiode Non Repetitive Peak Surge Current @ TJ = 25°C
dDiode Peak Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
96
48
192
192
8.0
175
16
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.45
2.0
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
08/16/06
1 page  
IRGP4068DPbF/IRGP4068D-EPbF
1000
tdOFF
100
tF
10
0
20 40 60 80 100
IC (A)
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
5000
4500
4000
EOFF
3500
3000
2500
2000
1500
1000
0
25 50 75 100 125
Rg (Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
18 400
tdOFF
16 Tsc Isc 350
14 300
100
tF
12
10
8
250
200
150
6 100
10
0
25 50 75 100 125
RG (Ω)
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
10000
Cies
1000
Coes
100
Cres
10
0
20 40 60 80
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
100
4
8 10 12 14 16
VGE (V)
Fig. 16 - VGE vs. Short Circuit
VCC = 400V; TC = 25°C
16
14 VCES = 300V
12 VCES = 400V
50
18
10
8
6
4
2
0
0 25 50 75 100
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600µH
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| PDF Descargar | [ Datasheet IRGP4068DPBF.PDF ] | |
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