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PDF 2N2604 Data sheet ( Hoja de datos )

Número de pieza 2N2604
Descripción (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR
Fabricantes Microsemi Corporation 
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No Preview Available ! 2N2604 Hoja de datos, Descripción, Manual

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TECHNICAL DATA
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
Devices
2N2604
2N2605
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.28 mW/0C above TA = +250C
Symbol
VCBO
VCEO
VEBO
IC
PT
TJ, Tstg
2N2604 2N2605
80 70
60
6.0
30
400
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
mW/0C
0C
Symbol
RθJC
Max.
0.437
Unit
0C/mW
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 µAdc
2N2604
2N2605
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Emitter-Base Breakdown Current
IE = 10 µAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
Min.
80
70
60
6.0
TO-46*
(TO-206AB)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
10 ηAdc
2.0 ηAdc
10 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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