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Número de pieza | FDB8442 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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November 2006
FDB8442
N-Channel PowerTrench® MOSFET
40V, 80A, 2.9mΩ
Features
Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 181nC at VGS = 10V
Low Miller Charge
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Electronic Steering
Integrated Starter / Alternator
Qualified to AEC Q101
Distributed Power Architectures and VRMs
RoHS Compliant
Primary Switch for 12V Systems
AD FREE I
©2006 Fairchild Semiconductor Corporation
FDB8442 Rev. A
1
www.fairchildsemi.com
1 page Typical Characteristics
4000
1000
100
10us
100us
10
LIMITED
BY PACKAGE
1 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
1ms
10ms
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10 STARTING TJ = 150oC
1
0.01
0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
TJ = 175oC
80
TJ = 25oC
40 TJ = -55oC
0
2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5.0
160
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 VGS = 5V
VGS = 4.5V
80
40
VGS = 4V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
30 TJ = 175oC
20
TJ = 25oC
10
0
4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.8
PULSE DURATION = 80µs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8442 Rev. A
5 www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDB8442.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDB8441 | N-Channel MOSFET | Fairchild Semiconductor |
FDB8442 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDB8443 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDB8443_F085 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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