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PDF T1635H Data sheet ( Hoja de datos )

Número de pieza T1635H
Descripción high temperature 16A Triacs
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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T1635H Series
Snubberless™ high temperature 16 A Triacs
Main features
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
16
600
35
Unit
A
V
mA
Description
Specifically designed to operate at 150° C, the
new 16 A T1635H Triacs provide an enhanced
performance in terms of power loss and thermal
dissipation. This facilitates the optimization of
heatsink dimensioning, leading to improved space
and cost effectiveness when compared to electro-
mechanical solutions.
Based on ST Snubberless™ technology, the
T1635H series offers high commutation switching
capabilities and high noise immunity levels on the
full range of Tj.
The T1635H series facilitates the optimization of
the control of universal motors and inductive
loads found in appliances such as vacuum
cleaners, and washing machines.
The T1635H Triacs are also suitable for use in
high temperature environment found in hot
appliances such as cookers, ovens, hobs, electric
heaters, and coffee machines.
A2
G
A1 A2
D2PAK
T1635H-G
G
A2
A1
TO-220AB Insulated
T1635H-I
A2
G
A2
A1
TO-220AB
T1635H-T
Order code
Part number
T1635H-600G
T1635H-600G-TR
T1635H-600TRG
T1635H-600IRG
Marking
T1635H-600G
T1635H-600G
T1635H-600T
T1635H-600I
TM: Snubberless is a trademark of STMicroelectronics
August 2006
Rev 1
1/10
www.st.com

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T1635H pdf
T1635H Series
Characteristics
Figure 9.
Relative variation of critical rate Figure 10. Relative variation of critical rate of
of decrease of main current (di/dt)c
decrease of main current (di/dt)c vs
versus junction temperature
reapplied dV/dt (typical values)
(dI/dt)c [Tj] / (dI/dt)c [Tj=150°C]
8
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
2.0
7 1.8
1.6
6
1.4
5 1.2
4 1.0
3 0.8
0.6
2
0.4
1
Tj(°C)
0.2
0 0.0
25 50 75 100 125 150 0.1
dV/dt (V/µs)
1.0 10.0
100.0
Figure 11.
Variation of thermal resistance,
junction to ambient versus copper
surface under tab (PCB FR4,
eCU 35 µm)
Figure 12.
Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
Rth(j-a)(°C/W)
80
70
60
50
40
30
D²PAK
IDRM/IRRM(mA)
1.E+01
1.E+00
1.E-01
VDRM=VRRM=600 V
VDRM=VRRM=400 V
VDRM=VRRM=200 V
1.E-02
20
10
0
0
1.E-03
SCU(cm²)
1.E-04
5 10 15 20 25 30 35 40
50
Tj(°C)
75 100 125
150
Figure 13. Acceptable repetitive peak
off-state voltage versus case-
ambient thermal resistance
Rth(c-a)(°C/W)
10
9
8
7
6
5
4
3
2
1
0
300
350
Rth(j-c)=1.2 °C/W
TJ=150 °C
VDRM/VRRM(V)
400 450 500 550 600
5/10

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