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PDF FCPF20N60 Data sheet ( Hoja de datos )
| Número de pieza | FCPF20N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCP20N60 / FCPF20N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
• 100% avalanche tested
July 2005
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
GDS
TO-220
GD S
TO-220F
D
{
z
G{
z
z
{
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP20N60 FCPF20N60
600
20 20*
12.5 12.5*
60 60*
± 30
690
20
20.8
4.5
208 39
1.67 0.3
-55 to +150
300
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP20N60
0.6
62.5
FCPF20N60
3.2
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. A1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP20N60
100
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
1 0 -2
0 .0 1
single pulse
N otes :
1 . Z θJC(t) = 0.6 °C /W M ax.
2 . D uty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -5
10 -4
1 0 -3
1 0 -2
10 -1
100
t1, S q ua re W a ve P u lse D u ra tio n [sec]
101
Figure 11-2. Transient Thermal Response Curve for FCPF20N60
D =0.5
100
0.2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
1 0 -2
1 0-5
N otes :
1.
Z (t)
θ JC
= 3.2°C /W
M ax.
2. D uty F actor, D = t1/t2
3. T - T = P * Z (t)
JM C
D M θJC
single pulse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
101
FCP20N60 / FCPF20N60 Rev. A1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCPF20N60.PDF ] | |
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