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PDF FCP16N60 Data sheet ( Hoja de datos )

Número de pieza FCP16N60
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FCP16N60 Hoja de datos, Descripción, Manual

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FCP16N60 / FCPF16N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.22:
• Ultra low gate charge (typ. Qg=45nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
January 2007
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance. 
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25qC)
- Continuous (TC = 100qC)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25qC)
- Derate above 25qC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP16N60 FCPF16N60
600
16 16*
10.1 10.1*
48 48*
r 30
tbd
16
20.8
4.5
167 37.9
1.33 0.3
-55 to +150
300
Symbol
RTJC
RTJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP16N60
0.75
62.5
FCPF16N60
3.3
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/qC
qC
qC
Unit
qC/W
qC/W
©2007 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. A
1
www.fairchildsemi.com

1 page




FCP16N60 pdf
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP20N60
100
D = 0 .5
1 0 -1
0.2
0.1
0.05
0.02
1 0 -2
0.01
single pulse
ĝ N otes :
1 . Z ɰ JC(t) = 0 .6 ŀ /W M a x.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z ɰ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
10 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FCPF20N60
D =0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
single pulse
1 0 -2
ĝ N otes :
1 . Z ɰ JC( t) = 3 .2 ŀ /W M a x .
2. D uty F actor, D =t1/t2
3 . T JM - T C = P D M * Z ɰ JC( t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q uare W ave P ulse D uration [sec]
101
FCP16N60 / FCPF16N60 Rev. A
5
www.fairchildsemi.com

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