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Número de pieza | MA26111 | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
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MA26111
Silicon epitaxial planar type
For switching circuits
Features
Allowing high-density mounting
Short reverse recovery time trr
Small terminal capacitance Ct
High breakdown voltage: VR = 80 V
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward surge current *
Junction temperature
Storage temperature
VR
VRM
IF
IFM
IFSM
Tj
Tstg
Note) * : t = 1 s
Rating
80
80
100
225
500
125
–55 to +125
Unit
V
V
mA
mA
mA
°C
°C
Unit: mm
0.01±0.005
21
1.00±0.05
0.39+−00..0013
0.25±0.05
0.25±0.05
21
0.65±0.01
0.05±0.03
1: Anode
2: Cathode
Marking Symbol: 1
ML-2-N1 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
VF IF = 100 mA
VR IR = 100 µA
IR VR = 75 V
Ct VR = 0, f = 1 MHz
0.95 1.2
80
100
0.6 2
Reverse recovery time *
trr
IF = 10 mA, VR = 6 V, Irr = 0.1 IR ,
RL = 100 Ω
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. . *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
V
V
nA
pF
ns
Publication date: May 2005
SKF00068AED
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MA26111.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA26111 | Silicon epitaxial planar type | Panasonic Semiconductor |
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