|
|
PDF GF4450 Data sheet ( Hoja de datos )
| Número de pieza | GF4450 | |
| Descripción | N-Channel Enhancement-Mode MOSFET | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GF4450 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
GF4450
N-Channel Enhancement-Mode MOSFET
CH ®
TGREENNFET Product0.197(5.00)
New0.189 (4.80)
SO-8
VDS 60V RDS(ON) 24mΩ ID 7.5A
8
1
0.050 (1.27)
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
4
Dimensions in inches
and (millimeters)
0.020 (0.51)
0.013 (0.33)
0.019
0.010
(0.48)
(0.25)
x
45
°
0.009 (0.23)
0.007 (0.18)
0.009 (0.23)
0.004 (0.10)
0.069 (1.75)
0.053 (1.35)
0°– 8°
0.050(1.27)
0.016 (0.41)
0.245 (6.22)
Min.
0.05 (1.27)
0.04 (1.02)
0.165 (4.19)
0.155 (3.94)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Mounting Pad Layout
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Weight: 0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
VDS
60
VGS ±20
ID 7.5
Pulsed Drain Current
IDM 50
Maximum Power Dissipation(1)
TA = 25°C
TA = 70°C
PD
2.5
1.6
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance(1)
TJ, Tstg
RθJA
–55 to 150
50
Note: (1) Surface Mounted on FR4 Board, t ≤ 10s
Unit
V
A
W
°C
°C/W
7/10/01
1 page  
GF4450
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
75
ID = 250µA
73
71
69
67
65
63
61
--50 --25 0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 11 – Transient Thermal
Impedance
Fig. 12 – Power vs. Pulse Duration
70
60
50
40
30
20
10
0
0.01
0.1
1
10 100
Fig. 13 – Maximum Safe Operating Area
100
10
RDS(ON) Limit
1
100µs
1ms
100m1s0ms
1s
10s
0.1 VGS = 10V
Single Pulse
on 1-in2 2oz Cu.
TA = 25°C
0.01
0.1
1
DC
10
VDS -- Drain-Source Voltage (V)
100
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GF4450.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GF4450 | N-Channel Enhancement-Mode MOSFET | General Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |