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PDF P22NE10L Data sheet ( Hoja de datos )
| Número de pieza | P22NE10L | |
| Descripción | STP22NE10L | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de P22NE10L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® STP22NE10L
N - CHANNEL 100V - 0.07 Ω - 22A TO-220
STripFET™ POWER MOSFET
TYPE
V DSS
RDS(on)
STP22NE10L
100 V < 0.085 Ω
s TYPICAL RDS(on) = 0.07 Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
ID
22 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
100
100
VG S
ID
ID
I DM ( •)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
± 20
22
14
88
90
Derating Factor
0.6
EAS (1) Single Pulse Avalanche Energy
250
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 oC, ID =22A , VDD = 50V
November 1999
Unit
V
V
V
A
A
A
W
W /o C
mJ
oC
oC
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STP22NE10L
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet P22NE10L.PDF ] | |
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