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Número de pieza | STP11NM80 | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP11NM80 (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
No Preview Available ! STB11NM80, STF11NM80
STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on)
max
RDS(on)*Qg
ID
STB11NM80
STF11NM80
STI11NM80 800 V
STP11NM80
STW11NM80
< 0.40 Ω
14Ω*nC
11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics'
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST's proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STI11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
I11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
September 2011
Doc ID 9241 Rev 11
1/22
www.st.com
22
1 page STB/F/I/P/W11NM80
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=11 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD= 50 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD= 50 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
11 A
-
44 A
- 0.86 V
612
- 7.22
23.6
ns
µC
A
970
- 11.25
23.2
ns
µC
A
Doc ID 9241 Rev 11
5/22
5 Page STB/F/I/P/W11NM80
Table 8. D²PAK (TO-263) mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0°
mm
Typ.
2.54
0.4
Package mechanical data
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 9241 Rev 11
11/22
11 Page |
Páginas | Total 22 Páginas | |
PDF Descargar | [ Datasheet STP11NM80.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP11NM80 | N-CHANNEL Power MOSFET | ST Microelectronics |
STP11NM80 | N-CHANNEL Power MOSFET | ST Microelectronics |
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