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PDF VHM40-06P1 Data sheet ( Hoja de datos )

Número de pieza VHM40-06P1
Descripción CoolMOS Power MOSFET
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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VHM40-06P1
CoolMOS Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Package with Electrically Isolated Base
Preliminary data sheet
MOSFET
Symbol
VDSS
VGS
ID25
ID90
dv/dt
EAS
EAR
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VDS < VDSS; IF 50A;diF/dt≤ 200A/µs
TVJ = 150°C
ID = 10 A; L = 36 mH; TC = 25°C
ID = 20 A; L = 5 µH; TC = 25°C
L4
L6
K 12 L 9
NTC
K 13
P 18
R 18
T 18
V 18
X 18
F10
K10
Maximum Ratings
600 V
±20 V
38 A
25 A
6 V/ns
1.8 J
1 mJ
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon
VGS = 10 V; ID = ID90
VGSth
VDS = 20 V; ID = 3 mA;
3.5
IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
60
IGSS VGS = ±20 V; VDS = 0 V
Q
g
Qgs VGS= 10 V; VDS = 350 V; ID = 50 A
Qgd
220
55
125
t
d(on)
tr
t
d(off)
tf
V = 10 V; V = 380 V;
GS DS
ID = 25 A; RG = 1.8
30
95
100
10
VF (reverse conduction) IF = 20 A; VGS = 0 V
0.9
RthJC
per MOSFET
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
70 m
5.5 V
25 µA
µA
100 nA
nC
nC
nC
ns
ns
ns
ns
1.1 V
0.45 K/W
ID25 = 38 A
VDSS = 600 V
RDSon = 70 m
1)
Pin arangement see outlines
Features
ECO-PAC 2 with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
fast CoolMOS power MOSFET - 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
Applications
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
1) CoolMOS is a trademark of Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
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