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PDF IRG4BC15MD Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC15MD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD- 94151A
IRG4BC15MD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
Fast IGBT
Features
• Rugged: 10µsec short circuit capable at VGS = 15V
• Low VCE(on) for 4 to 10kHz applications
• IGBT co-packaged with ultra-soft-recovery anti-parallel
diodes
• Industry standard TO-220AB package
Benefits
• Best Value for Appliance and Industrial applications
• Offers highest efficiency and short circuit capability for
intermediate applications
• Provides best efficiency for the mid range frequency
(4 to 10kHz)
• Optimized for Appliance and Industrial applications up to
1HP
• High noise immune "Positive Only" gate drive - Negative
bias gate drive not necessary
• For Low EMI designs - requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Drive IC's
• Allows simpler gate drive
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
tsc
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.88V
@VGE = 15V, IC = 8.6A
TO-220AB
Max.
600
14
8.6
28
28
4.0
12
16
± 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.7
7.0
–––
80
–––
Units
°C/W
g (oz)
1
5/25/01
1 page  
500
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
400 Coes = Cce + Cgc
Cies
300
200
100
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC15MD
20
VCC = 400V
I C = 9.0A
16
12
8
4
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.30
VCC= 480V
VGE = 15V
TJ = 25°C
I C= 8.6A
2.20
2.10
100
RG = 75Ω
VGE = 15V
VCC= 480V
10
1
IC = 17A
IC = 9.0A
IC = 4.3A
2.00
0
10 20 30 40 50 60 70 80
RG, Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC15MD.PDF ] | |
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