DataSheet.es    


PDF IRF7210PBF Data sheet ( Hoja de datos )

Número de pieza IRF7210PBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRF7210PBF (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! IRF7210PBF Hoja de datos, Descripción, Manual

www.DataSheet4U.com
PD - 97040
IRF7210PbF
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
S
S
S
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
HEXFET® Power MOSFET
1
8
A
D
2
7D
VDSS = -12V
3 6D
4 5 D RDS(on) = 0.007
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-12
±16
±12
±100
2.5
1.6
0.02
± 12
16
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V
V
°C
Units
°C/W
1
08/19/05

1 page




IRF7210PBF pdf
IRF7210PbF
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1 1 10
t1, Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
www.irf.com
5

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet IRF7210PBF.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRF7210PBFHEXFET Power MOSFETInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar