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PDF FDS8962C Data sheet ( Hoja de datos )

Número de pieza FDS8962C
Descripción Dual N & P-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDS8962C Hoja de datos, Descripción, Manual

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June 2006
FDS8962C
Dual N & P-Channel PowerTrench® MOSFET
Features
Q1: N-Channel
7.0A, 30V RDS(on) = 0.030@ VGS = 10V
RDS(on) = 0.044@ VGS = 4.5V
Q2: P-Channel
-5A, -30V RDS(on) = 0.052@ VGS = -10V
RDS(on) = 0.080@ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely used surface
mount package
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state ressitance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D2
D2
D1
D1
SO-8
Pin 1
G2
S2
S1G1
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q1
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
30
±20
7
20
2
1.6
1
0.9
-55 to +150
78
40
Q2
-30
±20
-5
-20
Package Marking and Ordering Information
Device Marking
FDS8962C
Device
FDS8962C
Reel Size
13”
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS8962C Rev. A1
1
www.fairchildsemi.com

1 page




FDS8962C pdf
Typical Characteristics: Q1 (N-Channel)
10
ID = 7A
8
6
VDS = 10V
20V
15V
4
2
0
0 2 4 6 8 10 12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
800
f = 1MHz
VGS = 0 V
600
Ciss
400
Coss
200
Crss
0
0
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS8962C Rev. A1
5 www.fairchildsemi.com

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