|
|
PDF FDS8960C Data sheet ( Hoja de datos )
| Número de pieza | FDS8960C | |
| Descripción | Dual N & P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDS8960C (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
August 2005
FDS8960C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: N-Channel
7.0A, 35V RDS(on) = 0.024Ω @ VGS = 10V
RDS(on) = 0.032Ω @ VGS = 4.5V
• Q2: P-Channel
–5A, –35V RDS(on) = 0.053Ω @ VGS = –10V
RDS(on) = 0.087Ω @ VGS = –4.5V
• Fast switching speed
• RoHS compliant
DD2DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8960C
FDS8960C
13”
Q2
5
6
Q1
7
8
4
3
2
1
Q1 Q2
35 –35
±20 ±25
7 –5
20 –20
2
1.6
1
0.9
–55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS8960C Rev C(W)
www.fairchildsemi.com
1 page  
Typical Characteristics: Q1 (N-Channel)
10
ID = 7A
8
6
VDS = 10V
20V
15V
4
2
0
0 2 4 6 8 10 12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100 µs
1ms
10ms
100ms
1s
10s
DC
0.1 VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
800
700
Ciss
600
f = 1 MHz
VGS = 0 V
500
400
300
Coss
200
100
C rss
0
0
5
10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
35
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
FDS8960C Rev C(W)
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDS8960C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDS8960C | Dual N & P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |