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PDF 2SC5761 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5761 | |
| Descripción | NPN SiGe RF TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5761
NPN SiGe RF TRANSISTOR FOR
LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for low noise ⋅ high-gain amplification
NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• SiGe technology (fT = 60 GHz, fmax = 60 GHz)
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
2SC5761
2SC5761-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
8.0
2.3
1.2
35
80
150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate
Unit
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Symbol
Rth (j-c)
Value
150
Unit
°C/W
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10212EJ02V0DS (2nd edition)
Date Published May 2003 CP(K)
Printed in Japan
The mark ! shows major revised points.
NEC Compound Semiconductor Devices 2001, 2003
1 page  
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
25
MSG
20 |S21e|2
15
10
5
0
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 5 GHz
25
20
15
MAG
10
|S21e|2
5
0
1 10 100
Collector Current IC (mA)
2SC5761
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
25
MSG
20
15 |S21e|2
10
5
0
1 10 100
Collector Current IC (mA)
Data Sheet PU10212EJ02V0DS
5
5 Page 
EQUAL NF CIRCLE
VCE = 2 V
IC = 5 mA
f = 1 GHz
Unstable Area
2SC5761
NFmin = 0.8 dB
Γopt
1.0 dB
1.5 dB
4.0 dB
2.5 dB
3.5 dB
2.0 dB
3.0 dB
VCE = 2 V
IC = 5 mA
f = 2 GHz
Unstable Area
NFmin = 0.85 dB
Γopt
1.0 dB
1.5 dB
2.0 dB
2.5 dB
3.0 dB
4.0 dB
3.5 dB
Data Sheet PU10212EJ02V0DS
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet 2SC5761.PDF ] | |
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