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PDF RDS070N03 Data sheet ( Hoja de datos )

Número de pieza RDS070N03
Descripción Excellent Resistance to damage from static electricity
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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Transistors
Switching (30V, 7A)
RDS070N03
RDS070N03
zFeatures
1) Low Qg.
2) Low on-resistance.
3) Excellent resistance to damage from static electricity.
zStructure
Silicon N-channel
MOS FET
zEquivalent circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
zExternal dimensions (Units : mm)
Max.1.75
(5) (4)
(8) (1)
36..90−+−+00.1.35
0.15
1.5−+0.1
0.5−+0.1
ROHM : SOP8
Each lead has same dimensions
(4)
(1) (2) (3) (4)
(1) (2) (3)
Gate Protection Diode.
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Reverse Drain
Current
Continuous
Pulsed
Source Current
(Body Diode)
Continuous
Pulsed
Total Power Dissipation(Tc=25°C)
Channel Temperature
Storage Temperature
Pw10µs, Duty cycle1%
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
Is
Isp
PD
Tch
Tstg
Limits
30
±20
7
28
7
28
1.6
6.4
2.5
150
55~+150
Unit
V
V
A
A
A
A
A
A
W
°C
°C

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