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PDF RD01MUS1 Data sheet ( Hoja de datos )
| Número de pieza | RD01MUS1 | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
LOT No.
1.5+/-0.1
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V
30 V
VGSS Gate to source voltage Vds=0V
+/-10
V
Pch Channel dissipation Tc=25°C
3.6 W
Pin Input Power
Zg=Zl=50Ω
60 mW
ID Drain Current
- 600 mA
Tch Channel Temperature - 150 °C
Tstg Storage temperature
- -40 to +125 °C
Rth j-c Thermal resistance
Junction to case 34.5
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=7.2V, Pin=30mW
Drain efficiency
f=520MHz,Idq=100mA
Note : Above parameters , ratings , limits and conditions are subject to change.
RD01MUS1
MITSUBISHI ELECTRIC
1/6
LIMITS
MIN TYP MAX
- - 50
- -1
1 1.8 3
0.8 1.4
-
50 65
-
UNIT
uA
uA
V
W
%
10 Jan 2006
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
100
150
S11
(mag) (ang)
0.927 -77.0
0.875 -101.2
S21
(mag) (ang)
19.536 132.3
15.657 116.5
S12
(mag) (ang)
0.043 41.3
0.050 26.5
S22
(mag) (ang)
0.772 -63.0
0.687 -83.1
200 0.833 -117.9 12.662 105.0 0.053 16.1 0.630 -97.3
250 0.811 -129.5 10.427 96.2 0.054 8.4 0.600 -107.1
300 0.798 -138.0 8.814 89.3 0.053 2.6 0.588 -114.4
350 0.791 -144.5 7.548 83.3 0.052 -2.4 0.583 -120.1
400 0.790 -149.7 6.541 78.2 0.051 -6.6 0.590 -124.6
450 0.788 -154.1 5.789 73.5 0.049 -9.9 0.597 -128.4
500 0.794 -158.0 5.106 69.0 0.047 -13.3 0.608 -131.7
520 0.796 -159.2 4.876 67.5 0.046 -14.1 0.615 -133.1
550 0.798 -161.2 4.576 65.2 0.045 -15.8 0.622 -134.8
600 0.801 -164.2 4.120 61.3 0.043 -18.5 0.636 -137.3
650 0.807 -167.0 3.714 58.0 0.041 -21.0 0.650 -140.1
700 0.813 -169.3 3.389 54.7 0.039 -22.3 0.666 -142.4
750 0.817 -171.6 3.092 51.3 0.036 -24.9 0.680 -144.6
800 0.825 -174.0 2.820 48.6 0.033 -25.7 0.694 -146.8
850 0.831 -176.0 2.616 46.0 0.031 -26.8 0.711 -148.8
900 0.837 -178.0 2.401 42.8 0.028 -27.8 0.723 -150.9
950 0.845 -179.9 2.207 40.9 0.026 -27.3 0.734 -152.9
1000 0.851 178.2 2.076 38.4 0.023 -27.0 0.749 -154.5
1050 0.857 176.5 1.912 35.5 0.021 -26.3 0.760 -156.3
1100 0.862 174.7 1.773 34.0 0.018 -23.8 0.771 -158.2
RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.945 -72.3 19.517 135.2 0.039 44.5 0.742 -57.4
150 0.896 -96.7 15.937 119.5 0.046 29.2 0.665 -76.6
200 0.856 -113.9 13.050 107.7 0.049 18.5 0.612 -90.6
250 0.833 -126.2 10.830 98.6 0.050 11.2 0.581 -100.4
300 0.819 -135.1 9.194 91.6 0.050 5.0 0.568 -107.8
350 0.810 -141.9 7.890 85.3 0.049 -0.3 0.565 -113.8
400 0.806 -147.7 6.868 80.1 0.047 -4.2 0.571 -118.5
450 0.804 -152.2 6.084 75.3 0.046 -7.7 0.580 -122.3
500 0.808 -156.4 5.382 70.7 0.044 -11.0 0.591 -126.1
520 0.809 -157.8 5.139 69.1 0.044 -12.4 0.596 -127.5
550 0.812 -159.9 4.831 66.7 0.042 -13.7 0.605 -129.4
600 0.813 -163.0 4.356 62.7 0.040 -16.2 0.618 -132.2
650 0.819 -166.0 3.931 59.3 0.038 -18.7 0.633 -135.1
700 0.824 -168.6 3.597 56.0 0.036 -20.8 0.649 -137.6
750 0.827 -171.0 3.283 52.4 0.034 -22.3 0.664 -140.1
800 0.834 -173.3 2.991 49.8 0.031 -23.7 0.678 -142.5
850 0.841 -175.5 2.779 47.1 0.029 -24.6 0.695 -144.5
900 0.845 -177.4 2.554 43.8 0.026 -25.9 0.708 -146.7
950 0.852 -179.4 2.350 41.9 0.024 -25.4 0.720 -148.9
1000 0.857 178.6 2.209 39.4 0.022 -24.3 0.736 -150.7
1050 0.864 176.9 2.035 36.3 0.019 -23.5 0.747 -152.4
1100 0.868 175.0 1.889 34.8 0.017 -20.1 0.759 -154.6
RD01MUS1
MITSUBISHI ELECTRIC
5/6
10 Jan 2006
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RD01MUS1.PDF ] | |
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