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PDF DS1610 Data sheet ( Hoja de datos )
| Número de pieza | DS1610 | |
| Descripción | Partitioned NV Controller | |
| Fabricantes | Dallas Semiconducotr | |
| Logotipo |  |
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DS1610
Partitioned NV Controller
FEATURES
PIN ASSIGNMENT
Converts CMOS RAMs into nonvolatile
memories
SOIC version is pin-compatible with the
Dallas Semiconductor DS1210 NV Controller
Unconditionally write protects all of memory
when VCC is out of tolerance
Write protects selected blocks of memory
regardless of VCC status when programmed
Automatically switches to battery backup
supply when power-fail occurs
AW
VCCO
AX
VBAT1
AY
TOL
DIS
GND
1
2
3
4
5
6
7
8
16 PFO
15 VCCI
14 AZ
13 VBAT2
12 WEO
11 CEO
10 WEI
9 CEI
16-Pin DIP and 16-Pin SOIC
Provides for multiple batteries
Consumes less than 100 nA of battery current
Test battery on power-up by inhibiting the
second memory cycle
Optional 5% or 10% power-fail detection
16-pin DIP or 16-pin SOIC surface-mount
package
Low forward voltage drop on the VCC switch
with currents of up to 150 mA
Optional industrial temperature range of
-40°C to +85°C
PIN DESCRIPTION
VCCI
VBAT1
VBAT2
VCCO
GND
- Input +5 Volt Supply
- + Battery 1 Input
- + Battery 2 Input
- RAM Power (VCC) Supply
- Ground
CEI - Chip Enable Input
CEO - Chip Enable Output
WEI - Write Enable Input
WEO
- Write Enable Output
TOL
- Power Supply Tolerance Select
AW - AZ
- Address Inputs
DIS - Memory Partition Disable
PFO - Power-Fail Output
DESCRIPTION
The DS1610 is a low-power CMOS circuit which solves the application problems of converting CMOS
RAMS into nonvolatile memories. In addition the device has the ability to unconditionally write protect
blocks of memory so that inadvertent write cycles do not corrupt program and special data space. The
power supply incoming voltage at the VCCI input pin is constantly monitored for an out-of-tolerance
condition. When such a condition is detected, both the chip enable and write enable outputs are inhibited
to protect stored data. The battery inputs are used to supply VCCO with power when VCCI is less than the
battery input voltages. Special circuitry uses a low leakage CMOS process which affords precise voltage
detection at extremely low current consumption. By combining the DS1610 Partitioned NV Controller
chip with a CMOS memory and batteries, nonvolatile RAM operation can be achieved.
The DS1610 Partitioned NV Controller functions like the Dallas Semiconductor DS1210 NV controller
when the ( DIS) disable pin is grounded. An internal pulldown resistor to ground on the DIS pin of the
DS1610S allows it to retrofit into DS1210S applications. When the DIS pin is grounded the address
inputs AW - AZ and the write enable input WEI are ignored. Also the power-fail output PFO and the write
enable output WEO are tristated.
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1 page  
CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
CIN
COUT
MIN
TYP
MAX
5
7
DS1610
(tA = 25°C)
UNITS NOTES
pF
pF
(0°C to 70°C; VCCI = 4.75V to 5.50V, TOL= GND)
AC ELECTRICAL CHARACTERISTICS
(VCCI = 4.50V to 5.50V, TOL-VCCO)
PARAMETER
SYMBOL MIN
TYP MAX UNITS NOTES
Address Setup
tAS 0
ns 9
Address Hold
tAH 50
ns 9
Read Recovery
tRR 10
ns 9
CEI , WEI Pulse Width
tCW 75
ns 9
CEI to CEO Falling
tPDF
5 ns 10
Propagation Delay
Later of CEI , WEI to WEO
tPDF
20 ns 10, 11
Falling Propagation Delay
CEI to CEO Rising
tPDR
5 ns 10
Propagation Delay
Earlier of CEI , WEI to WEO
tPDR
5 ns 10, 11
Rising Propagation Delay
Write Recovery
tWR 10
ns 9, 11
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Recovery at Power-Up
VCC Slew Rate Power-Down
VCC Slew Rate Power-Down
VCC Slew Rate Power-Up
CEO Pulse Width
tREC
tF
tFB
tF
tWP, tCE
25
300
10
0
WEO Pulse Width
tWP, tCE
(0°C to 70°C; VCC<4.5V)
TYP MAX UNITS NOTES
125 ms
12
µs
µs
µs 13
1.5 µs 7, 8
1.5 µs 7, 8
5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DS1610.PDF ] | |
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