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PDF QST8 Data sheet ( Hoja de datos )
| Número de pieza | QST8 | |
| Descripción | General purpose amplification | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de QST8 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistors
QST8
General purpose amplification (−12V, −1.5A)
QST8
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) : max. −200mV
At IC = −500mA / IB = −25mA
zExternal dimensions (Unit : mm)
2.8
1.6
Each lead has same dimensions
ROHM : TSMT6 Abbreviated symbol : T08
zAbsolute maximum ratings (Ta=25°C)
zEquivalent circuit
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
−15
−12
−6
Collector current
IC −1.5
ICP −3
500
Power dissipation
PC 1.25
0.9
Junction temperature
Tj 150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
Unit
V
V
V
A
A ∗1
mW/TOTAL ∗2
W/TOTAL ∗3
W/ELEMENT ∗3
°C
°C
(6) (5) (4)
Tr1 Tr2
(1) (2) (3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−15 − − V IC= −10µA
−12 − − V IC= −1mA
−6 − − V IE= −10µA
− − −100 nA VCB= −15V
− − −100 nA VEB= −6V
− −85 −200 mV IC= −500mA, IB= −25mA
270 − 680 − VCE= −2V, IC= −200mA ∗
− 400 − MHz VCE= −2V, IE=200mA, f=100MHz ∗
− 12 − pF VCB= −10V, IE=0A, f=1MHz
Rev.A
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet QST8.PDF ] | |
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