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PDF QST5 Data sheet ( Hoja de datos )
| Número de pieza | QST5 | |
| Descripción | Low frequency amplifier | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
Low frequency amplifier
QST5
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) : max. −370mV
At lc= −1.5A / lB= −75mA
zExternal dimensions (Unit : mm)
2.8
1.6
1pin mark
Each lead has same dimensions
ROHM : TSMT6 Abbreviated symbol : T05
QST5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−30
Emitter-base voltage
VEBO
−6
Collector current
IC −2
ICP −4
Power dissipation
500
PC 1.25
Junction temperature
Tj 150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, Pw=1ms
∗2 Each terminal mounted on a recommended
∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
Unit
V
V
V
A
A ∗1
mW ∗2
W ∗3
°C
°C
zEquivalent circuit
(6) (5)
(4)
(1) (2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff curent
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−30
−30
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−180
−
280
20
Max.
−
−
−
−100
−100
−370
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC= −10µA
IC= −1mA
IE= −10µA
VCB= −30V
VEB= −6V
IC= −1.5A, IB= −75mA
VCE= −2V, IC= −200mA
VCE= −2V, IE=200mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet QST5.PDF ] | |
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