|
|
Número de pieza | 2SC5752 | |
Descripción | NPN SILICON RF TRANSISTOR | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC5752 (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
No Preview Available ! www.DataSheet4U.com
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5752
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
4-PIN SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• 4-pin super minimold package
ORDERING INFORMATION
Part Number
2SC5752
2SC5752-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
9.0
6.0
2.0
100
200
150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15658EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
Printed in Japan
©
2001
1 page OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
VCE = 3.2 V
f = 0.9 GHz
250
Pout
ICq = 10 mA (RF OFF)
20
200
15 GP 150
10 100
IC
5 ηC 50
0
–10 –5
0
5 10
Input Power Pin (dBm)
0
15
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
VCE = 2.8 V
f = 1.8 GHz
ICq = 10 mA (RF OFF)
20
Pout
250
200
15 150
GP
10 100
ηC
5
0
–5 0
50
IC
0
5 10 15 20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
VCE = 3.2 V
f = 2.4 GHz
ICq = 10 mA (RF OFF)
20
Pout
250
200
15
10
5
0
–5
GP
ηC
IC
0 5 10 15
Input Power Pin (dBm)
150
100
50
0
20
2SC5752
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
VCE = 3.2 V
f = 1.8 GHz
ICq = 10 mA (RF OFF)
20
Pout
250
200
15
10
5
0
–5
GP
ηC
IC
0 5 10 15
Input Power Pin (dBm)
150
100
50
0
20
Data Sheet P15658EJ1V0DS
5
5 Page 2SC5752
VCE = 3 V, IC = 10 mA, ZO = 50 Ω
Frequency
(GHz)
S11
MAG.
ANG.
(deg.)
S21
MAG.
ANG.
(deg.)
0.1
0.735
−41.9 23.488
155.2
0.2
0.690
−74.7 19.184
134.7
0.3
0.652
−101.4 15.645
120.0
0.4
0.621
−119.5 12.844
109.8
0.5
0.602
−133.7 10.815
101.8
0.6
0.594 −144.7
9.251
95.5
0.7
0.590 −154.0
8.098
89.9
0.8
0.589 −161.1
7.147
85.2
0.9
0.589 −167.7
6.443
80.7
1.0
0.589 −173.4
5.825
76.4
1.1
0.596 −178.7
5.327
72.6
1.2
0.597
176.7
4.895
69.1
1.3
0.607
172.1
4.522
65.2
1.4
0.613
168.2
4.190
62.0
1.5
0.618
164.4
3.910
58.6
1.6
0.621
161.0
3.667
55.3
1.7
0.632
157.5
3.450
52.2
1.8
0.637
154.6
3.243
49.2
1.9
0.643
151.5
3.060
46.0
2.0
0.647
148.5
2.886
42.9
2.1
0.658
145.9
2.748
39.9
2.2
0.663
143.5
2.604
37.0
2.3
0.669
141.2
2.486
34.0
2.4
0.675
138.7
2.372
31.1
2.5
0.681
136.3
2.273
28.2
2.6
0.688
134.2
2.171
25.6
2.7
0.696
132.0
2.077
23.0
2.8
0.703
129.8
1.985
20.4
2.9
0.715
128.4
1.920
17.6
3.0
0.713
126.2
1.858
15.3
S12
MAG.
ANG.
(deg.)
0.024
0.040
0.049
0.054
0.057
0.060
0.062
0.064
0.066
66.6
54.8
44.9
39.4
35.7
33.9
32.9
32.5
32.1
0.069
0.071
0.073
0.075
0.077
0.080
0.082
0.084
0.087
0.089
32.3
32.3
32.5
32.7
32.9
33.1
33.3
33.4
33.5
33.3
0.092
0.095
0.098
0.102
0.104
0.107
0.110
0.113
0.116
0.118
33.2
33.4
33.3
33.3
33.4
33.1
32.5
32.2
31.8
31.3
0.121
31.0
S22
MAG.
ANG.
(deg.)
0.915
0.762
0.632
0.525
0.451
0.392
0.352
0.318
0.297
−24.3
−43.6
−56.7
−67.1
−74.2
−81.0
−86.1
−91.9
−96.5
0.280
0.269
0.261
0.256
0.250
0.250
0.247
0.251
0.251
0.260
−102.0
−106.1
−111.4
−115.2
−120.3
−124.0
−129.0
−132.8
−137.7
−141.5
0.263
0.275
0.281
0.294
0.299
0.312
0.317
0.329
0.334
0.346
−145.9
−149.4
−153.1
−156.0
−159.3
−162.0
−165.0
−167.9
−170.7
−172.9
0.352 −176.0
K MAG/MSG
(dB)
0.143
0.204
0.279
0.370
0.456
0.539
0.611
0.684
0.742
0.801
0.845
0.896
0.922
0.962
0.990
1.024
1.036
1.066
1.078
1.099
1.091
1.103
1.099
1.114
1.108
1.108
1.099
1.105
1.077
1.100
29.84
26.84
25.07
23.76
22.75
21.87
21.13
20.47
19.87
19.28
18.78
18.28
17.80
17.35
16.91
15.55
14.96
14.16
13.64
13.03
12.76
12.27
11.97
11.55
11.28
10.95
10.72
10.37
10.42
9.95
Data Sheet P15658EJ1V0DS
11
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet 2SC5752.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC5750 | NPN SILICON RF TRANSISTOR | Renesas |
2SC5751 | NPN SILICON RF TRANSISTOR | Renesas |
2SC5752 | NPN SILICON RF TRANSISTOR | NEC |
2SC5753 | NPN SILICON RF TRANSISTOR | CEL |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |