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PDF MA21D38 Data sheet ( Hoja de datos )

Número de pieza MA21D38
Descripción Silicon epitaxial planar type
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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Schottky Barrier Diodes (SBD)
MA21D38
Silicon epitaxial planar type
For high frequency rectification
Features
IF(AV) = 1 A rectification is possible
Low forward voltag VF
High non-repetitive peak forward surge voltage 
1.25±0.10
0.60±0.10
1
Unit: mm
0.58+–00..0032
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge
current *
VR
VRM
IF(AV)
IFSM
30
30
1.0
20
V
V
A
A
Junction temperature
Tj 125 °C
Storage time
Tstg 55 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2
0.80±0.10
0.16+–00..016
1: Anode
2: Cathode
Marking Symbol: 3U
SMini2-F2 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 0.5 A
0.34 0.38
V
VF2 IF = 0.7 A
0.36 0.40
VF3 IF = 1.0 A
0.38 0.42
Reverse current
IR VR = 30 V
100 µA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
40 pF
Reverse recovery time *
trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100
13 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 10 mA
IF = IR = 100 mA
RL = 100
Publication date: November 2004
SKH00138BED
1

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