|
|
Número de pieza | 2SC5787 | |
Descripción | NPN SILICON RF TRANSISTOR | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC5787 (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
No Preview Available ! www.DataSheet4U.com
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5787
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• Ideal for 3 GHz or higher OSC applications
• Low noise, high gain
fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz
NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
• UHS0 technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• 3-pin lead-less minimold package (1005 PKG)
ORDERING INFORMATION
Part Number
2SC5787
2SC5787-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
9.0
3.0
1.5
35
105
150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10070EJ01V0DS (1st edition)
(Previous No. P15786EJ1V0DS00)
Date Published January 2002 CP(K)
Printed in Japan
The mark • shows major revised points.
© NEC Corporation 2001
© NEC Compound Semiconductor Devices 2002
1 page GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
28
VCE = 1 V
24 f = 2 GHz
20
16
12
8
4
0
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40 VCE = 1 V
35 IC = 20 mA
30 MSG
25 MAG
20
15
10 |S21e|2
5
0
0.1 1
10
Frequency f (GHz)
2SC5787
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
28
VCE = 2 V
24 f = 2 GHz
20
16
12
8
4
0
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40 VCE = 2 V
35 IC = 20 mA
30 MSG
MAG
25
20
15
10 |S21e|2
5
0
0.1 1
10
Frequency f (GHz)
Data Sheet PU10070EJ01V0DS
5
5 Page 2SC5787
VCE = 1 V, IC = 7 mA, ZO = 50 Ω
Frequency
(GHz)
S11
MAG.
ANG.
(deg.)
0.1
0.751
−13.8
0.2
0.704
−27.1
0.3
0.635
−39.0
0.4
0.562
−48.8
0.5
0.497
−57.4
0.6
0.439
−65.2
0.7
0.393
−72.2
0.8
0.352
−78.3
0.9
0.315
−84.4
1.0
0.284
−90.3
1.1
0.266
−96.4
1.2
0.241
−103.3
1.3
0.223
−109.0
1.4
0.210
−114.6
1.5
0.196
−120.6
1.6
0.189
−126.2
1.7
0.186
−131.9
1.8
0.180
−137.9
1.9
0.177
−142.4
2.0
0.179
−147.0
2.1
0.177
−150.9
2.2
0.180
−155.4
2.3
0.178
−159.2
2.4
0.178
−163.4
2.5
0.180
−166.6
2.6
0.182
−170.5
2.7
0.185
−173.6
2.8
0.186
−176.9
2.9
0.189
178.7
3.0
0.194
177.4
4.0
0.265
154.5
5.0
0.382
142.2
S21
MAG.
ANG.
(deg.)
17.289
16.208
14.738
13.254
11.850
10.665
9.647
8.746
7.994
166.4
153.1
142.0
132.7
124.6
118.4
113.0
108.2
104.1
7.331
6.746
6.296
5.873
5.512
5.179
4.892
4.640
4.407
4.196
100.2
97.2
94.2
91.3
88.6
86.0
83.7
81.6
79.4
77.4
4.013
3.821
3.673
3.524
3.400
3.269
3.161
3.050
2.962
2.857
75.5
73.8
71.8
70.1
68.1
66.4
64.9
63.2
61.5
60.1
2.772
2.164
1.825
58.3
43.1
28.7
S12
MAG.
ANG.
(deg.)
0.013
0.023
0.032
0.040
0.046
0.053
0.058
0.062
0.067
88.0
77.2
71.2
67.9
65.7
64.4
63.9
63.7
63.9
0.072
0.076
0.081
0.086
0.091
0.096
0.101
0.106
0.111
0.116
64.1
64.7
65.2
65.7
66.0
66.3
66.8
67.2
67.5
67.7
0.121
0.127
0.132
0.138
0.144
0.150
0.155
0.162
0.168
0.174
68.0
68.1
68.1
68.3
68.3
68.3
68.3
68.1
68.1
67.9
0.181
0.256
0.331
67.8
65.1
57.3
S22
MAG.
ANG.
(deg.)
0.948
0.891
0.822
0.747
0.680
0.622
0.572
0.531
0.497
−9.5
−17.8
−24.6
−29.8
−33.7
−36.8
−39.0
−40.8
−42.4
0.469
0.441
0.419
0.403
0.389
0.376
0.366
0.356
0.348
0.340
−43.9
−45.8
−46.6
−47.7
−48.9
−50.1
−51.4
−52.5
−53.7
−54.8
0.334
0.328
0.323
0.319
0.315
0.310
0.306
0.303
0.299
0.297
−56.0
−57.2
−58.7
−59.9
−61.3
−62.6
−64.0
−65.4
−67.0
−69.0
0.296
0.275
0.250
−70.3
−94.2
−127.2
Data Sheet PU10070EJ01V0DS
11
11 Page |
Páginas | Total 22 Páginas | |
PDF Descargar | [ Datasheet 2SC5787.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC5781 | High-Frequency Low-Noise Amplifier and OSC Applications | Sanyo Semicon Device |
2SC5784 | TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
2SC5785 | TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
2SC5787 | NPN SILICON RF TRANSISTOR | NEC |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |