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PDF FLX257XV Data sheet ( Hoja de datos )

Número de pieza FLX257XV
Descripción GaAs FET & HEMT Chips
Fabricantes Eudyna Devices 
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No Preview Available ! FLX257XV Hoja de datos, Descripción, Manual

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FEATURES
High Output Power: P1dB = 33.5dBm(Typ.)
High Gain: G1dB = 7.5dB(Typ.)
High PAE: ηadd = 31%(Typ.)
Proven Reliability
DESCRIPTION
The FLX257XV chip is a power GaAs FET that is
designed for general purpose applications in the X-Band
frequency range as it provides superior power, gain, and
efficiency.
FLX257XV
GaAs FET & HEMT Chips
Drain
Drain
Drain
95 40
(Unit: µm)
Drain
Gate
Gate
Gate
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Ptot
Tstg
Tch
Tc = 25°C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
15.0
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 1000 1500
Transconductance
gm VDS = 5V, IDS = 600mA
- 600 -
Pinch-off Voltage
Vp VDS = 5V, IDS = 50mA -1.0 -2.0 -3.5
Gate Source Breakdown Voltage VGSO IGS = -50µA
-5 -
-
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
P1dB
G1dB
VDS = 10V
IDS 0.6IDSS
f = 10GHz
32.5 33.5 -
6.5 7.5 -
Power-added Efficiency
ηadd
- 31 -
Thermal Resistance
Rth Channel to Case
-
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
8 10
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Edition 1.4
October 2004
1

1 page





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