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PDF IRFBE30SPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFBE30SPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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O Dynamic dv/dt Rating
O Repetitive Avalanche Rated
O Fast Switching
O Ease of Paralleling
O Simple Drive Requirements
O Lead-Free
G
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
PD - 95507
IRFBE30SPbF
IRFBE30LPbF
HEXFET® Power MOSFET
D
VDSS = 800V
RDS(on) = 3.0Ω
ID = 4.1A
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
VGS
EAS
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
D2Pak
IRFBE30S
TO-262
IRFBE30L
Max.
4.1
2.6
16
125
1.0
± 20
260
4.1
13
2.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Min.
–––
–––
–––
Typ.
–––
0.50
–––
Max.
1.0
–––
62
Units
°C/W
1
07/06/04
1 page  
IRFBE30S/LPbF
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFBE30SPBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFBE30SPBF | HEXFET Power MOSFET | International Rectifier |
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