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PDF GE200NB60S Data sheet ( Hoja de datos )

Número de pieza GE200NB60S
Descripción N-CHANNEL IGBT
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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STGE200NB60S
N-channel 150A - 600V - ISOTOP
Low drop PowerMESH™ IGBT
General features
TYPE
VCES
VCE(sat)
(typ.)
IC
1.2V 150A
STGE200NB60S 600V
1.3V 200A
TC
100°C
25°C
High input impedance (voltage driven)
Low on-voltage drop (Vcesat)
Off losses include tail current
Low gate charge
High current capability
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized to achieve very low VCE(sat) (@ max
frequency of 1KHz).
Applications
Low frequency motor controls
Aluminum welding equipment
ISOTOP
Internal schematic diagram
Order codes
Part number
STGE200NB60S
Marking
GE200NB60S
Package
ISOTOP
Packaging
Tube
November 2006
Rev 8
1/13
www.st.com
13

1 page




GE200NB60S pdf
STGE200NB60S
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tc
tr(Voff)
td(off)
tf
tc
tr(Voff)
td(off)
tf
Delay time
Current rise time
Turn-on current slope
Dealy time
Current rise time
Turn-on current slope
Cross-over time
Off voltage rise time
Delay time
Current fall time
Cross-over time
Off voltage rise time
Delay time
Current fall time
IC = 100A , VCC = 480V
VGE = 15V , RG = 3
Tj = 25°C (see Figure 17)
IC = 100A , VCC = 480V
VGE = 15V , RG= 3
Tj = 125°C (see Figure 17)
IC = 100A , VCC = 480V
VGE = 15V , RG = 3
Tj = 25°C (see Figure 17)
IC = 100A , VCC = 480V
VGE = 15V , RG= 3
Tj = 125°C (see Figure 17)
Min. Typ. Max. Unit
64
112
1840
ns
ns
A/µs
56
114
1800
2.98
1.7
2.4
1.23
4.52
2.6
2.8
1.8
ns
ns
A/µs
µs
µs
µs
µs
µs
µs
µs
µs
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon (1)
Eoff (2)
Ets
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching loss
Total switching loss
Turn-on switching losses
Turn-off switching loss
Total switching loss
VCC = 480V, IC = 100A
RG= 3, VGE= 15V, Tj= 25°C
(see Figure 17)
VCC = 480V, IC = 100A
RG= 3, VGE= 15V,
Tj= 125°C (see Figure 17)
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17
2. Turn-off losses include also the tail of the collector current.
11.7
59
70.7
12
92
104
mJ
mJ
mJ
mJ
mJ
mJ
5/13

5 Page





GE200NB60S arduino
STGE200NB60S
Package mechanical data
DIM.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
MIN.
11.8
8.9
1.95
0.75
12.6
25.15
31.5
4
4.1
14.9
30.1
37.8
4
7.8
ISOTOP MECHANICAL DATA
mm
TYP.
MAX.
12.2
9.1
2.05
0.85
12.8
25.5
31.7
4.3
15.1
30.3
38.2
8.2
MIN.
0.466
0.350
0.076
0.029
0.496
0.990
1.240
0.157
0.161
0.586
1.185
1.488
0.157
0.307
inch
TYP.
MAX.
0.480
0.358
0.080
0.033
0.503
1.003
1.248
0.169
0.594
1.193
1.503
0.322
G
O
N
A
B
JC
K
L
M
11/13

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