DataSheet.es    


PDF IRHF54034 Data sheet ( Hoja de datos )

Número de pieza IRHF54034
Descripción (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRHF54034 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IRHF54034 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
PD - 93791D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on)
IRHF57034 100K Rads (Si) 0.048
IRHF53034 300K Rads (Si) 0.048
IRHF54034 500K Rads (Si) 0.048
IRHF58034 1000K Rads (Si) 0.060
IRHF57034
JANSR2N7492T2
60V, N-CHANNEL
REF: MIL-PRF-19500/701
5 TECHNOLOGY
™
ID QPL Part Number
12A* JANSR2N7492T2
12A* JANSF2N7492T2
12A* JANSG2N7492T2
12A* JANSH2N7492T2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
12*
9.5 A
48
25 W
0.2 W/°C
±20 V
270 mJ
12 A
2.5 mJ
9.6 V/ns
-55 to 150
oC
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/27/06

1 page




IRHF54034 pdf
Pre-Irradiation
IRHF57034, JANSR2N7492T2
2500
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
1000
Ciss
Coss
500
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 12A
16
12
VDS= 48V
VDS= 30V
VDS= 12V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1 TJ = 25° C
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5
VSD ,Source-to-Drain Voltage (V)
3.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IRHF54034.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRHF54034(IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLEInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar