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PDF IRF7421D1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7421D1 | |
| Descripción | MOSFET & Schottky Diode | |
| Fabricantes | International Rectifier | |
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PD 9.1411
PRELIMINARY
IRF7421D1
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Synchronous Regulator
Applications
l Generation V Technology
l SO-8 Footprint
FETKY T M
A1
S2
S3
G4
8
7
6
5
Description
To p V ie w
The FETKYTM family of co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator applications.
Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon
area. Combining this technology with International Rectifier's
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of portable
electronics applications.
MOSFET & Schottky Diode
AA
D
VDSS = 30V
D
D RDS(on) = 0.035Ω
D
Schottky Vf = 0.42V
The SO-8 has been modified through a customized leadframe
for enhanced thermal characteristics. The SO-8 package is
designed for vapor phrase, infra red or wave soldering
techniques.
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
6.4
4.1
3.3
33
2.5
1.0
8.0
± 20
-55 to + 150
Units
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Junction-to-Amb. _Schottky *
100
40
100
125
50 °C/W
125
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
ISD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
HEXFET is the registered trademark for International Rectifier Power MOSFETs )
1 page  
10V QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
IRF7421D1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-
VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0 .2 0
1 0 0.10
0 . 05
0 .0 2
0.01
1
0.1
0.00001
S INGLE P ULS E
(THE RMAL RESP ONSE)
0.0001
0.001
PD M
N otes:
1. D uty factor D = t1 / t2
t1
t2
2 . P ea k TJ = P D M x Z th J A + T A
0.01 0.1
1
10 100
t1 , Rectan gula r Pulse Du ratio n (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
A
1000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7421D1.PDF ] | |
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