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PDF IRHNA63164 Data sheet ( Hoja de datos )
| Número de pieza | IRHNA63164 | |
| Descripción | (IRHNA67164 / IRHNA63164) RADIATION HARDENED POWER MOSFET SURFACE-MOUNT | |
| Fabricantes | International Rectifier | |
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PD-96959A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA67164 100K Rads (Si)
IRHNA63164 300K Rads (Si)
RDS(on)
0.018Ω
0.018Ω
ID
56A*
56A*
IRHNA67164
150V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
SMD-2
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
56*
49
224
250
2.0
±20
283
56
25
7.5
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
02/16/06
1 page  
Pre-Irradiation
IRHNA67164
14000
12000
10000
8000
6000
VGS = 0V, f = 1 MH1z00KHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
4000
2000
Crss
0
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 56A
16
12
VDS = 120V
VDS = 75V
VDS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240 280
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ = 150°C
100
TJ = 25°C
10
1.0
0.0
VGS = 0V
0.5 1.0 1.5
VSD , Source-to-Drain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHNA63164.PDF ] | |
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