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PDF IRG4MC30F Data sheet ( Hoja de datos )
| Número de pieza | IRG4MC30F | |
| Descripción | Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR
PD-94313D
IRG4MC30F
Fast Speed IGBT
Features
C
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed Operation 3 kHz - 8 kHz
• High Operating Frequency
• Switching-loss Rating includes all "tail" losses
• Ceramic Eyelets
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from
International Rectifier have higher usable current
densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements
of the familiar power MOSFET. They provide
substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(on) max =1.7V
@VGE = 15V, IC = 15A
TO-254AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current À
Clamped Inductive Load Current Á
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
600
28
15
112
112
± 20
75
30
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
°C
g
Thermal Resistance
Parameter
RthJC
Junction-to-Case
www.irf.com
Min Typ Max Units
— — 1.67 °C/W
Test Conditions
1
01/10/13
1 page  
IRG4MC30F
2000
1600
1200
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
800
400
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20 VCC = 3400V
I C = 15A
16
12
8
4
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.55
VCC= 480V
VGE = 15V
1.50
TJ = 25°C
I C= 15A
1.45
1.40
100
RG = 7.5Ω
VGE = 15V
VCC= 480V
10
1
IC = 30A
IC = 15A
IC = 7.5A
1.35
0
10 20 30 40
RG, Gate Resistance (Ω)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| PDF Descargar | [ Datasheet IRG4MC30F.PDF ] | |
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