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PDF IRFB4228PBF Data sheet ( Hoja de datos )

Número de pieza IRFB4228PBF
Descripción PDP SWITCH
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PDP SWITCH
PD - 97227
IRFB4228PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
150
VDS (Avalanche) typ.
180
RDS(ON) typ. @ 10V
12
IRP max @ TC= 100°C
170
TJ max
175
DD
V
V
m:
A
°C
G
S
S
GD
TO-220AB
G
Gate
D
Drain
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Max.
±30
83
59
330
170
330
170
2.2
-40 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through … are on page 8
www.irf.com
1
06/26/06

1 page




IRFB4228PBF pdf
60
ID = 50A
50
40
30 TJ = 125°C
20
10
TJ = 25°C
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance vs. Gate Voltage
5.0
4.5
4.0
3.5
ID = 250µA
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFB4228PbF
500
ID
TOP
13A
400 20A
BOTTOM 50A
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
250
ton= 1µs
Duty cycle = 0.25
200
Half Sine Wave
Square Pulse
150
100
50
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1 0.20
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ τJ
τ1 τ1
R1R1
CiC= iτiRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.0852 0.000052
τ3τ3 0.1882 0.000980
0.1769 0.008365
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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