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Número de pieza | IRFC240 | |
Descripción | HEXFET Power MOSFET Die | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFC240 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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PD- 91873
HEXFET® Power MOSFET Die in Wafer Form
D
200 V
Size 4.0
G Rds(on)=0.18Ω
5" Wafer
S
IRFC240
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
200V Min.
0.180Ω Max.
VGS(th)
IDSS
IGSS
TJ
TSTG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
2.3V Min., 4.0V Max.
25µA Max.
± 10µA Max.
125°C Max.
Test Conditions
VGS = 0V, ID = 100µA
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V, TJ = 25°C
VGS = ±20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : IRF640
Die Outline
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
99% Al, 1% Si (0.004 mm)
0.147" x 0.201" ( 3.73mm x 5.11 mm)
125mm with 100 flat
0.375mm + / -0.020mm
01-5331
0.084 mm
0.51mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
3/23/99
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet IRFC240.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFC240 | HEXFET Power MOSFET Die | International Rectifier |
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