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PDF MA739 Data sheet ( Hoja de datos )
| Número de pieza | MA739 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA2Q739 (MA739)
Silicon epitaxial planar type
For high-frequency rectification
I Features
• Forward current (average) IF(AV): 0.7 A type
• Reverse voltage (DC value) VR: 90 V
• Allowing automatic insertion with the emboss taping
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current*1
VR
VRRM
IF(AV)
90
90
0.7
V
V
A
Non-repetitive peak forward
surge current*2
IFSM
10
A
Junction temperature
Tj −40 to +125 °C
Storage temperature
Tstg −40 to +125
°C
Note) *1 : With a printed-circuit board
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
4.4 ± 0.3
Unit : mm
0 to 0.05
21
1.2 ± 0.4
+ 0.4
5.0 − 0.1
1.2 ± 0.4
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Marking Symbol: PE
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 90 V
VF IF = 0.7 A
Ct VR = 10 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
1 mA
0.8 V
50 pF
100 ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 10 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
Output Pulse
IF
trr
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
526
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MA739.PDF ] | |
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