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PDF IRF7902PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7902PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 97194A
IRF7902PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET® Power MOSFET
VDSS
RDS(on) max
:30V Q1 22.6m @VGS = 10V
:Q2 14.4m @VGS = 10V
ID
6.4A
9.7A
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l Lead-Free
B
T!
T!
B!
9
T ÃÃ9!
T ÃÃ9!
T ÃÃ9!
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
6.4 9.7
5.1 7.8
51 78
1.4 2.0
0.9 1.3
0.011
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
20
90
Q2 Max.
20
62.5
Units
°C/W
www.irf.com
1
07/10/06
1 page  
Q1 - Control FET
2.0
ID = 6.4A
VGS = 10V
1.5
Typical Characteristics
IRF7902PbF
Q2 - Synchronous FET
2.0
ID = 9.7A
VGS = 10V
1.5
1.0 1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
60
ID = 6.4A
50
40
30 TJ = 125°C
20
TJ = 25°C
10
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
www.irf.com
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
40
ID = 9.7A
30
20 TJ = 125°C
10 TJ = 25°C
0
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7902PBF.PDF ] | |
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