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PDF S-AU81 Data sheet ( Hoja de datos )
| Número de pieza | S-AU81 | |
| Descripción | RF Power Amplifier Module | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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RF Power Amplifier Module
S-AU81
Power Amplifier Modules for Domestic
cdmaOne
· GaAs HBT Micro PA (on-chip bias circuit and
matching circuit)
· Output power: Po = 27.0dBmW (min)
· Gain: Gp = 28.0dB (typ.)
· Total current: It (1) = 385 mA (typ.)
(@Pout = 27.0dBmW)
· Low-voltage operation: Operation at VCC = 1.5 V is
possible
It (2) = 97 mA (typ) (@Pout = 14dBmW, VCC = 1.5 V)
· This device features an output control pin which
can be switched between low-power and high-power
settings.
It = 90 mA (typ.) (@Pout = 14dBmW, VCC = 2.70 V)
Maximum Ratings (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 0.0 g (typ.)
Characteristics
Supply voltage 1
Supply voltage 2
Control voltage
Collector current
Power dissipation
Operating temperature
Storage temperature range
Note 1: Ta = 25°C
Symbol
Rating
VCC1
VCC2
Vcon
ICC
PD (Note 1)
Top
Tstg
5
5
4
1
2
-20~+60
-30~+125
Unit
V
V
V
A
W
°C
°C
Marking
Pin No.1
Abbreviated product no.
U81
S-AU81
Unit: mm
―
―
5-6A
Monthly lot number
1
2001-11-06
1 page  
S-AU81
(2) Temperature Characteristics
Po = 27dBmW, Vcon = 2.85 V, f = 906 MHz, VCC1, VCC2 = 3.6 V
Gp, It – Tc
30 430
28 410
26 390
24 370
22
20
-40
-20
0
350
Gp
It
330
20 40 60 80 100
Tc (°C)
ACPR – Tc
-20
ACPR 900 kHz(-)
ACPR 900 kHz(+)
-40 ACPR 1.98 MHz(-)
ACPR 1.98 MHz(+)
-50
-60
-70
-80
-40
-20
0
20 40 60 80 100
Tc (°C)
5 2001-11-06
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet S-AU81.PDF ] | |
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