|
|
PDF MA4AGBLP912 Data sheet ( Hoja de datos )
| Número de pieza | MA4AGBLP912 | |
| Descripción | AlGaAs Beam Lead PIN Diode | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MA4AGBLP912 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
AlGaAs Beam Lead
PIN Diode
V 1.00
Features
n Ultra Low Capacitance < 22 fF
n Excellent RC Product < 0.10 pS
n High Switching Cutoff Frequency > 110 GHz
n 5 Nanosecond Switching Speed
n Driven by Standard +5 V TTL PIN Diode Driver
n Silicon Nitride Passivation
n Polyamide Scratch Protection
Outline ( Topview )
-
+
Description
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide
Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which
utilize M/A-COM’s patent pending hetero-junction technology,
produce less diode “On” resistance than conventional GaAs
devices. These devices are fabricated on a OMCVD epitaxial wafer
using a process designed for high device uniformity and extremely
low parasitics. The diodes themselves exhibit low series resistance
( 4 Ω ), low capacitance ( 20 fF ), and extremely fast switching
speed, ( 5 nS ). They are fully passivated with silicon nitride and
have an additional layer of a polymer for scratch protection. The
protective coating prevents damage to the junction and the anode
air bridges during handling.
Applications
The ultra low capacitance of the MA4AGBLP912 device allows
use through W-band (110 GHz) applications. The low RC product
and low profile of the PIN diodes makes it ideal for use in
microwave and millimeter wave switch designs, where lower
insertion loss and higher isolation are required. The + 10 mA ( low
loss state ) and the 0v ( isolation state ) bias of the diodes allows
the use a simple + 5 V TTL gate driver. These AlGaAs diodes are
used as switching arrays on radar systems, high-speed ECM
circuits, optical switching networks, instrumentation, and other
wideband multi-throw switch assemblies.
Absolute Maximum Ratings
@ +25 °C1
Parameter
Maximum Rating
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Mounting Temperature
+235 °C for 10 sec.
C.W. Incident RF Power
+ 23 dBm C. W.
Forward D.C. Current
40 mA
Reverse D.C. Voltage @ -10 µA
-50 V
1. Exceeding any of these values may result in permanent
damage
1 page  
AlGaAs Beam Lead PIN Diode
Diode SPICE Values
MA4AGBLP912
V 1.00
MA4AGBPL912 SPICE Model
PinDiodeModel
Is=1.0E-14 A
Vi=0.0 V
wBv= 50 V
µe-= 8600 cm^2/V-sec wPmax= 100 mW
Wi= 3.0 um
Ffe= 1.0
Rr= 10 K Ohms
Cjmin= 0.020 pF
Tau= 10 nsec
Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I)
Cj0= 0.022 pF
Vj= 1.35 V
M= 0.5
Fc= 0.5
Imax= 0.04 A
Kf= 0.0
Af=1.0
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MA4AGBLP912.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA4AGBLP912 | AlGaAs Beam Lead PIN Diode | Tyco Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |