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PDF DG2017 Data sheet ( Hoja de datos )

Número de pieza DG2017
Descripción Dual DPDT Analog Switch
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! DG2017 Hoja de datos, Descripción, Manual

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New Product
DG2017
Vishay Siliconix
Low-Voltage, Low rON, Dual DPDT Analog Switch
FEATURES
D Low Voltage Operation (2.0 V to 5.5 V)
D Low On-Resistance @ 2.7 V - rON:
SW1, SW2 - 3.2 W
SW3, SW4 - 0.64 W
D Fast Switching: tON = 46 ns
tOFF = 21 ns
D QFN-16 (4x4 mm) Package
BENEFITS
APPLICATIONS
D Space Saving Solution
D Low Power Consumption
D Guaranteed Low Voltage Operation
D Low Voltage Logic Compatible
D Cellular Phones
D Integrated Speaker Switching
D Audio and Video Signal Routing
D PCMCIA Cards
D Battery Operated Systems
DESCRIPTION
The DG2017 is a dual DPDT (double-pole/double-throw),
optimized for high performance analog switching, and
specifically designed to benefit portable audio applications.
One pair of double-throw switches is sub 1 W for low
impedance speaker performance while the second pair of
double-throw switches is suitable for microphone applications.
With the DPDT configuration, the DG2017 provides the
flexibility for stereo-single-end or differential BTL output
structures with a fully integrated differential microphone
switching solution.
The DG2017 is an integrated monolithic device in a QFN-16
(4 x 4 mm) package that provides a space saving solution over
the use of multiple single SPDT devices as well as providing
the advantage of on-resistance flatness and matching that
single SPDT devices cannot offer.
The DG2017 provides low charge injection (2 pC), fast
switching time (tON and tOFF less than 100 ns), excellent
Off-Isolation and Crosstalk (–70 dB @ 100 kHz). During
operation, continuous current through any or all switches is
rated at "200 mA, ideal for portable audio applications.
Built on Vishay Siliconix’s low voltage CMOS process, the
DG2017 contains an epitaxial layer that prevents latchup.
Break-before-make is guaranteed. When on, each switch
conducts equally well in both directions, and block up to the
power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
QFN-16 (4 X 4)
COM1 NO1 V+ NC4
16 15 14 13
NC1 1
IN1, IN2 2
NO2 3
COM2 4
12 COM4
11 NO4
10 IN3, IN4
9 NC3
5678
NC2 GND NO3 COM3
Top View
Document Number: 72228
S-31067—Rev. A, 26-May-03
Logic
0
1
TRUTH TABLE
NC1, 2, 3 and 4 NO1, 2, 3 and 4
ON
OFF
OFF
ON
ORDERING INFORMATION
Temp Range
-40 to 85°C
Package
16-Pin QFN (4 x 4 mm)
Part Number
DG2017DN
www.vishay.com
1

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DG2017 pdf
New Product
DG2017
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
Leakage Current vs. Temperature
V+ = 5.0 V
Leakage vs. Analog Voltage
800
600
INO(off), IINC(off)
100
ICOM(on)
400
ICOM(on)
200
0
ICOM(off)
- 200
10
INO(off), INC(off)
- 400
ICOM(off)
1
- 60 - 40 - 20
0
20 40
Temperature (_C)
60
80 100
Switching Time vs. Temperature
160
140
120 tON V+ = 2 V
- 600
- 800
0.0
100
80
V+ = 3 V
0.5 1.0 1.5 2.0 2.5
VCOM, VNO, VNC - Analog Voltage (V)
Switching Time vs. Temperature
tON V+ = 2 V
3.0
100
80
tON V+ = 3 V
60
40 tON V+ = 5 V
20 tOFF V+ = 2 V
tOFF V+ = 3 V
0
- 60 - 40
tOFF V+ = 5 V
- 20 0 20 40 60 80
Temperature (_C)
100
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
10
0
Loss
- 10
- 20 XTALK
- 30 OIRR
- 40
- 50
- 60
- 70
- 80
- 90
100 K
DG2017
SW1 and SW2
V+ = 3 V
RL = 50 W
1 M 10 M
Frequency (Hz)
100 M
1G
60
tON V+ = 3 V
40
tON V+ = 5 V
tOFF V+ = 2 V
20
tOFF V+ = 5 V
tOFF V+ = 3 V
0
- 60 - 40 - 20 0 20 40 60 80 100
Temperature (_C)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
10
0
Loss
- 10
XTALK
- 20
- 30 OIRR
- 40
- 50
- 60
- 70
- 80
- 90
100 K
DG2017
SW3 and SW4
V+ =3 V
RL = 50 W
1 M 10 M
Frequency (Hz)
100 M
1G
Document Number: 72228
S-31067—Rev. A, 26-May-03
www.vishay.com
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