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PDF PDTD123T Data sheet ( Hoja de datos )
| Número de pieza | PDTD123T | |
| Descripción | resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
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PDTD123T series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 21 July 2005
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1: Product overview
Type number Package
Philips
PDTD123TK
SOT346
PDTD123TS [1] SOT54
PDTD123TT
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTB123TK
PDTB123TS
PDTB123TT
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s 500 mA output current capability
s Reduces component count
s Reduces pick and place costs
1.3 Applications
s Digital application in automotive and
industrial segments
s Controlling IC inputs
s Cost saving alternative for BC817 series
in digital applications
s Switching loads
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min Typ
--
--
1.54 2.2
Max Unit
50 V
500 mA
2.86 kΩ
1 page  
Philips Semiconductors
PDTD123T series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
103
hFE
006aaa447
(1)
(2)
(3)
102
10−1
1
10 102 103
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10−1
VCEsat
(V)
006aaa448
(1)
(2)
(3)
10−2
10−1
1
10 102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 15214
Product data sheet
Rev. 02 — 21 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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