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Número de pieza | PDTC144W | |
Descripción | NPN resistor-equipped transistors | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC144W series
NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Product specification
Supersedes data of 2004 Mar 23
2004 Aug 17
1 page Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Product specification
PDTC144W series
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
CONDITIONS
in free air
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
VALUE
250
500
500
625
500
500
833
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
RR-----21--
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
VCB = 50 V; IE = 0 A
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 µA; VCE = 5 V
IC = 2 mA; VCE = 0.3 V
Cc collector capacitance
IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
MIN.
−
−
−
−
60
−
−
4
33
0.37
TYP.
−
−
−
−
−
−
1.7
2.7
47
0.47
MAX.
100
1
50
110
−
150
1.2
−
61
0.57
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
− − 2.5 pF
2004 Aug 17
5
5 Page Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Plastic surface mounted package; 3 leads
Product specification
PDTC144W series
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48 0.15
0.38 0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2004 Aug 17
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PDTC144W.PDF ] |
Número de pieza | Descripción | Fabricantes |
PDTC144 | NPN resistor-equipped transistor | NXP Semiconductors |
PDTC144 | NPN resistor-equipped transistor | NXP Semiconductors |
PDTC144 | NPN resistor-equipped transistor | NXP Semiconductors |
PDTC144 | NPN resistor-equipped transistor | NXP Semiconductors |
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