|
|
Número de pieza | PDTC123Y | |
Descripción | NPN resistor-equipped transistors | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PDTC123Y (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! www.DataSheet4U.com
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 03 — 24 March 2005
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family.
Table 1: Product overview
Type number
Package
Philips
PDTC123YE
SOT416
PDTC123YK
SOT346
PDTC123YM
SOT883
PDTC123YS [1]
SOT54
PDTC123YT
SOT23
PDTC123YU
SOT323
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
JEDEC
-
TO-236
-
TO-92
TO-236AB
-
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTA123YE
PDTA123YK
PDTA123YM
PDTA123YS
PDTA123YT
PDTA123YU
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s Reduces component count
s Reduces pick and place costs
1.3 Applications
s General-purpose switching and
amplification
s Inverter and interface circuits
s Circuit drivers
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ
--
--
1.54 2.2
3.6 4.5
Max Unit
50 V
100 mA
2.86 kΩ
5.5
1 page Philips Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC =10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 µA
VCE = 300 mV; IC = 20 mA
R2/R1 bias resistor ratio
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
- - 100 nA
- - 1 µA
- - 50 µA
- - 700 µA
35 -
--
-
150 mV
- 0.75 0.3 V
2.5 1.15 -
V
1.54 2.2 2.86 kΩ
3.6 4.5 5.5
- - 2 pF
9397 750 14017
Product data sheet
Rev. 03 — 24 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 11
5 Page Philips Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information . . . . . . . . . . . . . . . . . . . . 10
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 24 March 2005
Document number: 9397 750 14017
Published in The Netherlands
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet PDTC123Y.PDF ] |
Número de pieza | Descripción | Fabricantes |
PDTC123 | NPN resistor-equipped transistor | NXP Semiconductors |
PDTC123E | NPN resistor-equipped transistors | NXP Semiconductors |
PDTC123ET | NPN resistor-equipped transistor | NXP Semiconductors |
PDTC123JE | NPN resistor-equipped transistor | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |